Switchable domains in point contacts based on transition metal tellurides

We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The occurs between a low "metallic-type" state, which is the ground high "semiconducting-type" state by applying certain bias (<1V), while reverse takes place opposite polarity. origin effect can be formation domain PC core voltage, when strong electric field (about 10kV/cm) modifies crystal structure controls its polarization. In addition to discovery PCs, we also suggest simple method material testing before functionalizing them, offers great advantage finding suitable novel substances. new functionality studied TMTs arising from switchable domains submicron hetero-structures that are promising, e.g., for non-volatile random access memory (RRAM) engineering.